Magnetoresistive random-access memory

Magnetoresistive Random-Access Memory (MRAM) is a type of memory that uses special materials that can change their shape when an electric current is applied to them. This allows the memory to be read quickly and stored permanently, like your computer’s regular memory. The way MRAM works is it takes a tiny magnetic field and attaches it to some electrons. These electrons are then organized in layers and when an electric current is passed through them, they change their shape. This makes it possible to store data in a permanent way because the shape becomes a sort of code. So when the electric current is passed through again, the data can be read from the code because it remembers the shape and the data.